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Lead-free Green
DVR1V8W - DVR5V0W
COMPLEX ARRAY FOR VOLTAGE REGULATORS
Features
NEW PRODUCT
* * * * *
Epitaxial Planar Die Construction Selectively Paired NPN Transistors & Zener Diodes for Series Pass Voltage Regulator Circuits Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
G H K M BC A
SOT-363 Dim A B C D F H J K
D F L
Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 8
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25
0.65 Nominal
Mechanical Data
* * * * * * * *
Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.008 grams (approximate)
A1 K1
J
L M a
B1
E1
All Dimensions in mm
NC
C1
Maximum Ratings, Total Device
Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage and Temperature Range
@ TA = 25C unless otherwise specified Symbol Pd RqJA Tj, TSTG Value 200 625 -55 to +150 Unit mW C/W C
Maximum Ratings, NPN Transistor
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3)
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC @ TA = 25C unless otherwise specified Symbol Value 0.9 Unit V Value 45 18 5 1 Unit V V V A
Maximum Ratings, Zener Element
Characteristic Forward Voltage
Notes:
@ IF = 10mA
VF
1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30578 Rev. 4 - 2
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DVR1V8W - DVR5V0W
a Diodes Incorporated
Electrical Characteristics, NPN Transistor
@ TA = 25C unless otherwise specified Min Max 3/4 3/4 3/4 1 1 Unit Test Condition
NEW PRODUCT
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO
45 18 5 3/4 3/4
V V V mA mA 3/4 V
IC = 100mA, IE = 0 IC = 1mA, IB = 0 IE = 100mA, IC = 0 VCB = 40V, IE = 0 VEB = 4V, IC = 0
hFE VCE(SAT)
150 3/4 3/4 100
800 0.5
IC = 100mA, VCE = 1V IC = 300mA, IB = 30mA
Cobo fT
8 3/4
pF MHz
VCB = 10V, f = 1.0MHz, IE = 0 VCB = 10V, IE = 50mA, f = 100MHz
Electrical Characteristics, Zener Element
Type Number Nom (V) DVR1V8W DVR2V5W DVR3V3W DVR5V0W
Note:
@ TA = 25C unless otherwise specified Maximum Reverse Leakage Current IZT IR @ V R mA 5 3 3 5 V 1 1 2 3 mA 5 5 5 0.05
Zener Voltage Range (Note 5) VZ @ IZT Min (V) 3.1 3.7 4.4 4.85 Max (V) 3.5 4.1 5.0 5.36 3.3 3.9 4.7 5.1
4. Short duration test pulse used to minimize self-heating effect. 5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TT = 30C 1C.
DS30578 Rev. 4 - 2
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DVR1V8W - DVR5V0W
200
1000
NEW PRODUCT
Pd, POWER DISSIPATION (mW)
150
100
hFE, DC CURRENT GAIN
100
50
VCE = 1.0V
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device)
1 0.0001
.001
.01
.1
1
10
IC, COLLECTOR CURRENT (A) Fig. 2, Typical DC Current Gain vs Collector Current (NPN Transistor)
100
f = 1MHz
1000
COBO, OUTPUT CAPACITANCE (pF)
VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV)
1 10 100
100
10
10
1 0.1
1 0.0001
.001
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3, Output Capacitance vs. Collector-Base Voltage (NPN Transistor)
.01 .1 1 IC, COLLECTOR CURRENT (A) Fig. 4, Collector Saturation Voltage vs Collector Current (NPN Transistor)
10
50
Tj = 25C 1V8
1000
2V5 3V3
Tj = 25 C f = 1MHz
IZ, ZENER CURRENT (mA)
CT, TOTAL CAPACITANCE (pF)
40
VR = 1V VR = 2V
30
100
VR = 1V
20
VR = 2V
10
Test Current IZ 5.0mA
10
0 0 1 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 5 Zener Breakdown Characteristics (DVR1V8W - DVR3V3W) 2 10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V) Fig. 6 Total Capacitance vs Nominal Zener Voltage (DVR1V8W - DVR3V3W)
DS30578 Rev. 4 - 2
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DVR1V8W - DVR5V0W
1000 900
100
Tj = 25 C f = 1MHz
NEW PRODUCT
CT, TOTAL CAPACITANCE (pF)
800
IZ, ZENER CURRENT (uA)
VR =1V
700 600 500 400 300 200 100 0
0 1 2 3 4 5 6
VR = 2V
10
1 1 10 100
VZ, ZENER VOLTAGE (V) Fig. 7 Zener Breakdown Characteristics (DVR5V0W)
VZ, NOMINAL ZENER VOLTAGE (V) Fig. 8 Total Capacitance vs Nominal Zener Voltage (DVR5V0W)
Ordering Information
Device DVR1V8W-7 DVR2V5W-7 DVR3V3W-7 DVR5V0W-7
Notes:
(Note 6) Marking Code VR01 VR02 VR03 VR04 Packaging SOT-363 SOT-363 SOT-363 SOT-363 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXXX = Product Type Marking Code, See Table Above, e.g., VR01 = DVR1V8W YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September
XXXX
Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 2004 R Jun 6 2005 S Jul 7 Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D
Sample Applications
VCC = 6.0V
Sample Application for DVR5V0W: R17= 560W VCC9 = 6.0V Vo(nom) = 5.0V Io = 100mA Iq(typical8) = 0.5mA @ Io = 0mA Typical8 Vreg(load) = 0.2V from Io = 100mA to 0mA
R1 = 560R
YM
Q1 Vo(nom) = 5.0V Z1
DVR5V0W
R Load
DS30578 Rev. 4 - 2
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DVR1V8W - DVR5V0W
NEW PRODUCT
VCC = 4.3V
Sample Application for DVR3V3W: VCC9 = 4.3V R17= 3700W Vo(nom) = 3.3V Io = 100mA Iq(typical8) = 0.7mA @ Io = 0mA Typical8 Vreg(load) = 0.21V from Io = 100mA to 0mA
R1 = 370R
Q1 Vo(nom) = 3.3V Z1
DVR3V3W
R Load
VCC = 3. 5V
Sample Application for DVR2V5W: R17= 250W VCC9 = 3.5V Vo(nom) = 2.5V Io = 100mA Iq(typical8) = 0.91mA @ Io = 0mA Typical8 Vreg(load) = 0.13V from Io = 100mA to 0mA
R1 = 250R
Q1 Vo(nom) = 2. 5V Z1
DVR2V5W
R Load
VCC = 2. 8V
Sample Application for DVR1V8W: R17= 450W VCC9 = 2.8V Vo(nom) = 1.8V Io = 100mA Iq(typical8) = 0.55mA @ Io = 0mA Typical8 Vreg(load) = 0.25V from Io = 100mA to 0mA
R1 = 450R
Q1 Vo(nom) = 1. 8V Z1
DVR1V8W
R Load
Notes:
7. Resistor R1 not included. 8. Typical performance shown is under setup and operating conditions specified in the sample applications. 9. Recommended VCC(min) ~ Vo(nom) + 1V.
DS30578 Rev. 4 - 2
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DVR1V8W - DVR5V0W

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